Evaluation of anisotropic strain relaxation in strained silicon-on-insulator nanostructure by oil-immersion raman spectroscopy

Daisuke Kosemura*, Motohiro Tomita, Koji Usuda, Atsushi Ogura

*この研究の対応する著者

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Precise stress measurements have been desired in order to apply strained Si substrates to next-generation transistors. Oil-immersion Raman spectroscopy enables the evaluation of the anisotropic stress state in the strained Si layer of the strained Si substrate even under (001)-oriented Si backscattering geometry. First, we found that the phonon deformation potentials (PDPs) reported by Anastassakis et al. in 1990 was the most valid among the three sets of PDP previous reported. Using these PDPs, the precise Raman measurements of biaxial stress in strained Si-oninsulator (SSOI) nanostructures were performed. The biaxial stresses σxx and σyy decreased with the decrease in SSOI width and length, which was consistent with the finite element method calculation.

本文言語English
論文番号02BA03
ジャーナルJapanese journal of applied physics
51
2 PART 2
DOI
出版ステータスPublished - 2012 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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