Evaluation of device parameters for membrane lasers on si fabricated with active-layer bonding followed by epitaxial growth

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Article

2 引用 (Scopus)

抄録

We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200-to 600-?m-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7mA for active-region lengths of 200, 300, 400, and 600 ?m, respectively. The differential quantum efficiency also depends on activeregion length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2 cm-1 and internal quantum efficiency to be 32.4% with appropriate doping profile.

元の言語English
ページ(範囲)196-203
ページ数8
ジャーナルIEICE Transactions on Electronics
E100C
発行部数2
DOI
出版物ステータスPublished - 2017 2 1
外部発表Yes

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Epitaxial growth
Quantum efficiency
DBR lasers
Membranes
Lasers
Substrates
Thermal diffusion
Laser resonators
Epitaxial layers
Ion implantation
Semiconductor quantum wells
Heterojunctions
Doping (additives)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Evaluation of device parameters for membrane lasers on si fabricated with active-layer bonding followed by epitaxial growth. / Fujii, Takuro; Takeda, Koji; Kanno, Erina; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

:: IEICE Transactions on Electronics, 巻 E100C, 番号 2, 01.02.2017, p. 196-203.

研究成果: Article

Fujii, T, Takeda, K, Kanno, E, Hasebe, K, Nishi, H, Yamamoto, T, Kakitsuka, T & Matsuo, S 2017, 'Evaluation of device parameters for membrane lasers on si fabricated with active-layer bonding followed by epitaxial growth', IEICE Transactions on Electronics, 巻. E100C, 番号 2, pp. 196-203. https://doi.org/10.1587/transele.E100.C.196
Fujii, Takuro ; Takeda, Koji ; Kanno, Erina ; Hasebe, Koichi ; Nishi, Hidetaka ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Evaluation of device parameters for membrane lasers on si fabricated with active-layer bonding followed by epitaxial growth. :: IEICE Transactions on Electronics. 2017 ; 巻 E100C, 番号 2. pp. 196-203.
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AU - Fujii, Takuro

AU - Takeda, Koji

AU - Kanno, Erina

AU - Hasebe, Koichi

AU - Nishi, Hidetaka

AU - Yamamoto, Tsuyoshi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

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AB - We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200-to 600-?m-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7mA for active-region lengths of 200, 300, 400, and 600 ?m, respectively. The differential quantum efficiency also depends on activeregion length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2 cm-1 and internal quantum efficiency to be 32.4% with appropriate doping profile.

KW - Direct bonding

KW - Epitaxial growth

KW - Membrane lasers

KW - Silicon photonics

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