Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, A. Ogura

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者Qizhi Liu, Jean-Michel Hartmann, Aaron Thean, Seiichi Miyazaki, Atsushi Ogura, Xiao Gong, Matty Caymax, Andreas Schulze, G. Mashi, Andreas Mai, Mikael Osting, G. Niu, David Harame
出版社Electrochemical Society Inc.
ページ87-93
ページ数7
7
ISBN(印刷版)9781510871670
DOI
出版ステータスPublished - 2018
イベント8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9月 302018 10月 4

出版物シリーズ

名前ECS Transactions
番号7
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

Other8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

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