Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography

Tomoko Gowa Oyama, Akihiro Oshima, Masakazu Washio, Seiichi Tagawa

研究成果: Article査読

16 被引用数 (Scopus)

抄録

At and below the 11 nm node, shortening the exposure wavelength to 10 nm (extreme ultraviolet (EUV)soft x-ray region), especially at 6.6-6.8 nm, has been discussed as next-generation EUV lithography. In this study, dosesensitivities of typical resists were obtained at several wavelengths down to 3.1 nm and were found to depend on the wavelength. However, it was confirmed that the absorbed dose, calculated from the dosesensitivity and the respective linear absorption coefficient, was almost independent of the wavelength and constant for each resist. Thus, the resist sensitivity for next-generation lithography was predicted at wavelengths < 10 nm.

本文言語English
論文番号042153
ジャーナルAIP Advances
1
4
DOI
出版ステータスPublished - 2011 12

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル