Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions

Akihiro Oshima, Tomoko Gowa Oyama, Masakazu Washio, Seiichi Tagawa

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

The different exposure sources induce a different energy deposition in resist materials. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. The sensitivities of positive tone non-chemically (non-CA, ZEP) and chemically amplified (CA, UV-3) resist materials are evaluated using various ionized radiation such as EUV, soft X-rays, EB and various ion beams. Since the notations of sensitivity of resist vary with exposure sources, in order to evaluate systematically, the resist sensitivity were estimated in terms of absorbed dose in resist materials. Highly-monochromated EUV and soft X-rays (6.7 nm - 3.1 nm) from the BL27SU of the SPring-8, high energy ion beams (C6+, Ne10+, Mg 12+, Si14+, Ar18+, Kr36+ and Xe 54+) with 6 MeV/u from MEXP of HIMAC, EB from low energy EB accelerator (Hamamatsu Photonics, EB-engine®, 100 kV) and EB lithography system (30 keV and 75keV) were used for the exposure. For non-CA and CA resist materials, it was found that LET effects for sensitivity would be hardly observed except for heavier ion beams. Especially, in the case of the high energy ion beam less than Si14+ with 6 MeV/u, it is suggested that the radiation induced chemical reaction would be equivalent to EUV, soft X-ray and EB exposure. Hence, it indicates that the resist sensitivity could be systematically evaluated by absorbed dose in resist materials.

本文言語English
ホスト出版物のタイトルAdvances in Resist Materials and Processing Technology XXX
DOI
出版ステータスPublished - 2013 6 5
イベントAdvances in Resist Materials and Processing Technology XXX - San Jose, CA, United States
継続期間: 2013 2 252013 2 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8682
ISSN(印刷版)0277-786X

Conference

ConferenceAdvances in Resist Materials and Processing Technology XXX
国/地域United States
CitySan Jose, CA
Period13/2/2513/2/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

フィンガープリント

「Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル