Evaluation of soft-error hardness of DRAMs undei quasi-heavy ion irradiation using he single ion microprobe technique

T. Matsukawa*, S. Mori, T. Tanii, T. T. Ariniura, M. Koh, K. Igarashi, T. Sugimoto, I. Ohdomari

*この研究の対応する著者

研究成果査読

5 被引用数 (Scopus)

抄録

Soft-error immunity of a 256kbit DRAM against quasi-heavy ion irradiation has been evaluated using He single ion microprobe at Waseda University. The technique for hitting micron size area with arbitrary number of He ions enables us to simulate the space environment under irradiation of heavy ions with higher LET than that of a-particles. From the maps of error-sensitive sites obtained by irradiating various number of He ions, the threshold LET of soft-errors, effect of diffused charges on the soft-error cross section, and susceptibility to multi-bit errors have been estimated. The results of measuring single-ion induced noise charges at the PN junction which is considered as equivalent to the storage node of the DRAM have been presented and the origins which determine the soft-error immunity under irradiation with various LET have been discussed.

本文言語English
ページ(範囲)2849-2855
ページ数7
ジャーナルIEEE Transactions on Nuclear Science
43
6 PART 1
DOI
出版ステータスPublished - 1996

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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