Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

M. Takai, Y. Arita, S. Abo, T. Iwamatsu, S. Maegawa, H. Sayama, Y. Yamaguchi, M. Inuishi, T. Nishimura

研究成果: Conference contribution

抄録

Soft errors in DRAMs and SRAMs have been evaluated using nuclear microprobes and neutron sources. Direct observation of soft errors in a DRAM such as soft error mapping indicates both cell-mode and bit- line-mode soft errors at local positions. Well engineering parameters, such as retrograde wells by high energy ion implantation in DRAMs and SRAMs, are directly evaluated by ion beam induced current (IBIC) using nuclear microprobes. Neutron induced soft errors caused by boron in BPSG (borophosphocilicate) layers have been clarified. Floating body effect in partially depleted SOI(silicon-on-insulator) MOSFETs and the effectiveness of body-tie structures in SOI MOSFETs have been directly observed using nuclear microprobe irradiation.

本文言語English
ホスト出版物のタイトルEuropean Solid-State Device Research Conference
編集者Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
出版社IEEE Computer Society
ページ17-24
ページ数8
ISBN(電子版)2914601018
DOI
出版ステータスPublished - 2001 1 1
外部発表はい
イベント31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
継続期間: 2001 9 112001 9 13

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

Other

Other31st European Solid-State Device Research Conference, ESSDERC 2001
CountryGermany
CityNuremberg
Period01/9/1101/9/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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