Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation

Motohiro Tomita*, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Atsushi Ogura

*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

Global and local strained-Si samples, namely strained-Si on insulator (SSOI) wafer and a Si substrate with a patterned SiN film were each evaluated by electron backscattering pattern (EBSP). In the EBSP measurements for SSOI, biaxial tensile stresses (biaxial tensile strains and compressive strain perpendicular to the surface) were obtained, whose values were consistent with those obtained by UV-Raman spectroscopy. One-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by EBSP, UV-Raman spectroscopy with a deconvolution method, and edge force model calculation. The results were well consistent with each other. EBSP allows us to measure stress and strain in the patterned SiN sample with 150-nm wide space. Furthermore, anisotropic biaxial stress including shear stress was also obtained by EBSP.

本文言語English
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
出版社Trans Tech Publications Ltd
ページ123-128
ページ数6
ISBN(印刷版)9783037850510
DOI
出版ステータスPublished - 2011
外部発表はい

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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