Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films

K. Yoshioka, R. Yokogawa, M. Koharada, H. Takeuchi, G. Ogasawara, I. Hirosawa, T. Watanabe, A. Ogura

研究成果: Conference contribution

抄録

We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ2) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ2 have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ2 decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.

本文言語English
ホスト出版物のタイトルPRiME 2020
ホスト出版物のサブタイトルSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
編集者Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
出版社IOP Publishing Ltd.
ページ473-479
ページ数7
5
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2020
外部発表はい
イベントPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
継続期間: 2020 10 42020 10 9

出版物シリーズ

名前ECS Transactions
番号5
98
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
CountryUnited States
CityHonolulu
Period20/10/420/10/9

ASJC Scopus subject areas

  • Engineering(all)

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