Evaluation of temperature dependence and lifetime of 79GHz power amplifier

Chen Yang Li, Takeshi Yoshida, Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Shuhei Amakawa, Minoru Fujishima

研究成果: Conference contribution

抄録

A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

元の言語English
ホスト出版物のタイトルIMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
ページ100-101
ページ数2
DOI
出版物ステータスPublished - 2013
外部発表Yes
イベント2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 - Osaka, Japan
継続期間: 2013 6 52013 6 6

Other

Other2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
Japan
Osaka
期間13/6/513/6/6

Fingerprint

Power amplifiers
Temperature
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Li, C. Y., Yoshida, T., Katayama, K., Motoyoshi, M., Takano, K., Amakawa, S., & Fujishima, M. (2013). Evaluation of temperature dependence and lifetime of 79GHz power amplifier. : IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai (pp. 100-101). [6602258] https://doi.org/10.1109/IMFEDK.2013.6602258

Evaluation of temperature dependence and lifetime of 79GHz power amplifier. / Li, Chen Yang; Yoshida, Takeshi; Katayama, Kosuke; Motoyoshi, Mizuki; Takano, Kyoya; Amakawa, Shuhei; Fujishima, Minoru.

IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai. 2013. p. 100-101 6602258.

研究成果: Conference contribution

Li, CY, Yoshida, T, Katayama, K, Motoyoshi, M, Takano, K, Amakawa, S & Fujishima, M 2013, Evaluation of temperature dependence and lifetime of 79GHz power amplifier. : IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai., 6602258, pp. 100-101, 2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013, Osaka, Japan, 13/6/5. https://doi.org/10.1109/IMFEDK.2013.6602258
Li CY, Yoshida T, Katayama K, Motoyoshi M, Takano K, Amakawa S その他. Evaluation of temperature dependence and lifetime of 79GHz power amplifier. : IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai. 2013. p. 100-101. 6602258 https://doi.org/10.1109/IMFEDK.2013.6602258
Li, Chen Yang ; Yoshida, Takeshi ; Katayama, Kosuke ; Motoyoshi, Mizuki ; Takano, Kyoya ; Amakawa, Shuhei ; Fujishima, Minoru. / Evaluation of temperature dependence and lifetime of 79GHz power amplifier. IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai. 2013. pp. 100-101
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abstract = "A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2{\%} and 4.9{\%}, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.",
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AU - Yoshida, Takeshi

AU - Katayama, Kosuke

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Amakawa, Shuhei

AU - Fujishima, Minoru

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N2 - A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

AB - A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

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