Evaluation of temperature dependence and lifetime of 79GHz power amplifier

Chen Yang Li, Takeshi Yoshida, Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Shuhei Amakawa, Minoru Fujishima

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

本文言語English
ホスト出版物のタイトルIMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
ページ100-101
ページ数2
DOI
出版ステータスPublished - 2013
外部発表はい
イベント2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 - Osaka, Japan
継続期間: 2013 6 52013 6 6

出版物シリーズ

名前IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

Other

Other2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
国/地域Japan
CityOsaka
Period13/6/513/6/6

ASJC Scopus subject areas

  • 電子工学および電気工学

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