Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy

Ryo Yokogawa, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura

研究成果: Article

抜粋

Thermal conductivity characteristics of Si nanowires (SiNWs) treated with thermal oxidation before and after a subsequent Ar+ ion irradiation process were evaluated by UV Raman spectroscopy, in order to investigate the impact of interfacial oxide-induced lattice disorder. Laser-power-dependent Raman spectroscopy showed that the rise in temperature caused by laser heating of SiNWs is suppressed by the Ar+ ion irradiation process. It is considered that this suppression of an increase in temperature is caused by the Ar+ ion irradiation breaking bonds at the SiO2/SiNW interface. These results indicate that not only roughness and defects but also bonding characteristics at SiO2/SiNW interfaces should be carefully considered to achieve a low value of thermal conductivity for next-generation SiNW thermoelectric devices. To realize phonon scattering in SiNWs efficiently, optimization of thermal oxidation is necessary.

元の言語English
記事番号SDDF04
ジャーナルJapanese journal of applied physics
58
発行部数SD
DOI
出版物ステータスPublished - 2019

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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