Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Akihiro Oshima, Toru Hinata, Hirotaka Nakamura, Toshitaka Oka, Nagayasu Oshima, Brian E. O'Rourke, Ryoichi Suzuki, Masakazu Washio, Seiichi Tagawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

本文言語English
ホスト出版物のタイトルAdvances in Patterning Materials and Processes XXXI
出版社SPIE
ISBN(印刷版)9780819499745
DOI
出版ステータスPublished - 2014 1 1
イベントAdvances in Patterning Materials and Processes XXXI - San Jose, CA, United States
継続期間: 2014 2 242014 2 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9051
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Conference

ConferenceAdvances in Patterning Materials and Processes XXXI
国/地域United States
CitySan Jose, CA
Period14/2/2414/2/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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