Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Korii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.126131

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu^*, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, T. Sota, S. Nakamura

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

54 被引用数 (Scopus)

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The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In_0.03Ga_0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

本文言語	English
ページ（範囲）	1671-1673
ページ数	3
ジャーナル	Applied Physics Letters
巻	76
号	13
DOI	https://doi.org/10.1063/1.126131
出版ステータス	Published - 2000 3 27

ASJC Scopus subject areas

物理学および天文学（その他）

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Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Korii, K., Deguchi, T., Sota, T., & Nakamura, S. (2000). Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters, 76(13), 1671-1673. https://doi.org/10.1063/1.126131

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. / Chichibu, S. F.; Wada, K.; Müllhäuser, J.; Brandt, O.; Ploog, K. H.; Mizutani, T.; Setoguchi, A.; Nakai, R.; Sugiyama, M.; Nakanishi, H.; Korii, K.; Deguchi, T.; Sota, T.; Nakamura, S.

In: Applied Physics Letters, Vol. 76, No. 13, 27.03.2000, p. 1671-1673.

研究成果: Article › 査読

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title = "Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes",

abstract = "The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.",

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AU - Chichibu, S. F.

AU - Wada, K.

AU - Müllhäuser, J.

AU - Brandt, O.

AU - Ploog, K. H.

AU - Mizutani, T.

AU - Setoguchi, A.

AU - Nakai, R.

AU - Sugiyama, M.

AU - Nakanishi, H.

AU - Korii, K.

AU - Deguchi, T.

AU - Sota, T.

AU - Nakamura, S.

PY - 2000/3/27

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N2 - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

AB - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

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Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

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