Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu*, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, T. Sota, S. Nakamura

*この研究の対応する著者

研究成果: Article査読

54 被引用数 (Scopus)

抄録

The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

本文言語English
ページ(範囲)1671-1673
ページ数3
ジャーナルApplied Physics Letters
76
13
DOI
出版ステータスPublished - 2000 3 27

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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