Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Korii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.126131

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, T. Sota, S. Nakamura

先進理工学部

研究成果: Article

51 引用（Scopus）

抜粋

The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In_0.03Ga_0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

元の言語	English
ページ（範囲）	1671-1673
ページ数	3
ジャーナル	Applied Physics Letters
巻	76
発行部数	13
DOI	https://doi.org/10.1063/1.126131
出版物ステータス	Published - 2000 3 27

フィンガープリント

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

これを引用

Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Korii, K., Deguchi, T., Sota, T., & Nakamura, S. (2000). Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters, 76(13), 1671-1673. https://doi.org/10.1063/1.126131

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. / Chichibu, S. F.; Wada, K.; Müllhäuser, J.; Brandt, O.; Ploog, K. H.; Mizutani, T.; Setoguchi, A.; Nakai, R.; Sugiyama, M.; Nakanishi, H.; Korii, K.; Deguchi, T.; Sota, T.; Nakamura, S.

：: Applied Physics Letters, 巻 76, 番号 13, 27.03.2000, p. 1671-1673.

研究成果: Article

Chichibu, S. F. ; Wada, K. ; Müllhäuser, J. ; Brandt, O. ; Ploog, K. H. ; Mizutani, T. ; Setoguchi, A. ; Nakai, R. ; Sugiyama, M. ; Nakanishi, H. ; Korii, K. ; Deguchi, T. ; Sota, T. ; Nakamura, S. / Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. ：: Applied Physics Letters. 2000 ; 巻 76, 番号 13. pp. 1671-1673.

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abstract = "The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.",

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AU - Nakanishi, H.

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AU - Sota, T.

AU - Nakamura, S.

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文献にアクセス

10.1063/1.126131