抄録
The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.
本文言語 | English |
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ページ(範囲) | 1671-1673 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 76 |
号 | 13 |
DOI | |
出版ステータス | Published - 2000 3月 27 |
ASJC Scopus subject areas
- 物理学および天文学(その他)