Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Korii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.126131

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu^*, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, T. Sota, S. Nakamura

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

55 被引用数 (Scopus)

抄録

The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In_0.03Ga_0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

本文言語	English
ページ（範囲）	1671-1673
ページ数	3
ジャーナル	Applied Physics Letters
巻	76
号	13
DOI	https://doi.org/10.1063/1.126131
出版ステータス	Published - 2000 3月 27

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.126131

他のファイルとリンク

引用スタイル

Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Korii, K., Deguchi, T., Sota, T., & Nakamura, S. (2000). Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters, 76(13), 1671-1673. https://doi.org/10.1063/1.126131

@article{0a10000fa3024498a8d862c98ce7daed,

title = "Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes",

abstract = "The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.",

author = "Chichibu, {S. F.} and K. Wada and J. M{\"u}llh{\"a}user and O. Brandt and Ploog, {K. H.} and T. Mizutani and A. Setoguchi and R. Nakai and M. Sugiyama and H. Nakanishi and K. Korii and T. Deguchi and T. Sota and S. Nakamura",

year = "2000",

month = mar,

day = "27",

doi = "10.1063/1.126131",

language = "English",

volume = "76",

pages = "1671--1673",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

AU - Chichibu, S. F.

AU - Wada, K.

AU - Müllhäuser, J.

AU - Brandt, O.

AU - Ploog, K. H.

AU - Mizutani, T.

AU - Setoguchi, A.

AU - Nakai, R.

AU - Sugiyama, M.

AU - Nakanishi, H.

AU - Korii, K.

AU - Deguchi, T.

AU - Sota, T.

AU - Nakamura, S.

PY - 2000/3/27

Y1 - 2000/3/27

N2 - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

AB - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

UR - http://www.scopus.com/inward/record.url?scp=0000156226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000156226&partnerID=8YFLogxK

U2 - 10.1063/1.126131

DO - 10.1063/1.126131

M3 - Article

AN - SCOPUS:0000156226

VL - 76

SP - 1671

EP - 1673

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル