Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La1.17-xPb xVS3.17

A. Ino, T. Okane, S. I. Fujimori, A. Fujimori, T. Mizokawa, Y. Yasui, T. Nishikawa, M. Sato

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential μ abruptly jumps by ∼0.07 eV between x = 0.15 and 0.17, indicating that a charge gap is opened at x ≃0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x≃0.16, the gap is filled and the photoemission spectral weight at μ, ρ(μ), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around μ compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ρ(μ)→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at T = 300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around μ are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.

本文言語English
論文番号195116
ページ(範囲)195116-1-195116-8
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
69
19
DOI
出版ステータスPublished - 2004 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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「Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La<sub>1.17-x</sub>Pb <sub>x</sub>VS<sub>3.17</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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