Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals

Komomo Tani*, Tatsuo Fujimoto, Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki Seki, Takayuki Yano

*この研究の対応する著者

研究成果

6 被引用数 (Scopus)

抄録

Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2015
出版社Trans Tech Publications Ltd
ページ73-76
ページ数4
858
ISBN(印刷版)9783035710427
DOI
出版ステータスPublished - 2016
イベント16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
継続期間: 2015 10 42015 10 9

出版物シリーズ

名前Materials Science Forum
858
ISSN(印刷版)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
国/地域Italy
CitySicily
Period15/10/415/10/9

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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