Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Takenori Ushimi*, Hiromi Nakata, Toshihiro Ishizuka, Kazutoshi Sasayama, Shulong Lu, Jianrong Dong, Atsushi Tackeuchi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

本文言語English
論文番号252414
ジャーナルApplied Physics Letters
100
25
DOI
出版ステータスPublished - 2012 6月 18

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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