Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, S. F. Chichibu*

*この研究の対応する著者

研究成果: Conference article査読

抄録

Exciton dynamics in nonpolar (11-20) InxGa1-xN/GaN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth were studied. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25 and 17% for the peaks at 2.92 and 2.60 eV, respectively.

本文言語English
ページ(範囲)2082-2086
ページ数5
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
3
DOI
出版ステータスPublished - 2006 7 31
イベント6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
継続期間: 2005 8 282005 9 2

ASJC Scopus subject areas

  • 凝縮系物理学

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