Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

A. Neogi, H. Morkoç, T. Kuroda, A. Tackeuchi, T. Kawazoe, M. Ohtsu

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

本文言語English
ページ(範囲)213-217
ページ数5
ジャーナルNano Letters
5
2
DOI
出版ステータスPublished - 2005 2 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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