Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

S. F. Chichibu*, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Cantwell, C. W. Litton, T. Sota, M. Kawasaki

*この研究の対応する著者

研究成果: Article査読

65 被引用数 (Scopus)

抄録

Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

本文言語English
ページ(範囲)S67-S77
ジャーナルSemiconductor Science and Technology
20
4
DOI
出版ステータスPublished - 2005 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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