Exciton spectra of AlN epitaxial films

T. Onuma, S. F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, M. Tanaka

研究成果: Article査読

抄録

Excitonic resonance energies in a C-plane AlN epilayer on the (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence (CL) measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral lineshape was fitted considering A (Γ7vu → Γ7c) and BC (Γ9v, Γ7vl → Γ7c) exciton transitions. The energies them at 0 K were obtained to be 6.211 and 6.266 eV, giving the crystal field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature ΘE was estimated to be 580 K.

本文言語English
ページ(範囲)515-520
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
693
出版ステータスPublished - 2002 1 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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