Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma*, S. F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, M. Tanaka

*この研究の対応する著者

研究成果: Article査読

60 被引用数 (Scopus)

抄録

Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7vu→Γ7c) and BC (Γ9v7vl→Γ 7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature E was estimated to be 580 K.

本文言語English
ページ(範囲)652-654
ページ数3
ジャーナルApplied Physics Letters
81
4
DOI
出版ステータスPublished - 2002 7 22

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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