@article{3791158be6cb4ffb89e20e85ffcb05ab,
title = "Exciton spin relaxation dynamics in InGaAs/InP quantum wells",
abstract = "The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.",
author = "Shunsuke Akasaka and Shogo Miyata and Takamasa Kuroda and Atsushi Tackeuchi",
note = "Funding Information: The authors appreciate the help of A. Wada in the experiment. This work was supported in part by a grant-in-aid for Scientific Research on the Priority Area “Semiconductor Nanospintronics” (No. 14076217) from the MEXT. The work was also partly supported by a Grant-in-Aid for the 21st Century COE Program (Physics of Self-organization Systems) at Waseda University from the MEXT. ",
year = "2004",
month = sep,
day = "13",
doi = "10.1063/1.1792376",
language = "English",
volume = "85",
pages = "2083--2085",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}