Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

K. Seki*, Y. Wakisaka, T. Kaneko, T. Toriyama, T. Konishi, T. Sudayama, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi, T. Mizokawa, Y. Ohta

*この研究の対応する著者

研究成果: Article査読

89 被引用数 (Scopus)

抄録

We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

本文言語English
論文番号155116
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
90
15
DOI
出版ステータスPublished - 2014 10 13
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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