Excitonic emissions from hexagonal GaN epitaxial layers

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura

研究成果: Article査読

170 被引用数 (Scopus)

抄録

Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra

本文言語English
ページ(範囲)2784-2786
ページ数3
ジャーナルJournal of Applied Physics
79
5
DOI
出版ステータスPublished - 1996 3 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Excitonic emissions from hexagonal GaN epitaxial layers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル