Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)

Toshiki Makimoto, Hisao Saito, Toshio Nishida, Naoki Kobayashi

研究成果: Article査読

98 被引用数 (Scopus)

抄録

Dilute GaAs1-xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

本文言語English
ページ(範囲)2984-2986
ページ数3
ジャーナルApplied Physics Letters
70
22
DOI
出版ステータスPublished - 1997 6 2
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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