Excitonic polariton structures in Wurtzite GaN

Kousuke Torii, Shigefusa F. Chichibu*, Takahiro Deguchi, Hisayuki Nakanishi, Takayuki Sota, Shuji Nakamura

*この研究の対応する著者

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

本文言語English
ページ(範囲)268-276
ページ数9
ジャーナルPhysica B: Condensed Matter
302-303
DOI
出版ステータスPublished - 2001
イベントYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
継続期間: 2000 9 242000 9 27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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