Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.
|ジャーナル||Diamond and Related Materials|
|号||2 -4 pt 1|
|出版ステータス||Published - 1993 1 1|
|イベント||Proceedings of the 3rd International Conference on the New Diamond Science and Technology (ICNDST-3) jointly with 3rd European Conference on Diamond, Diamond-like and Related Coatings (DF '92). Part 2 (of 2) - Heidelberg, Ger|
継続期間: 1992 8 31 → 1992 9 4
ASJC Scopus subject areas
- 化学 (全般)