Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films

Junjun Jia, Aiko Takasaki, Nobuto Oka, Yuzo Shigesato

研究成果: Article

67 引用 (Scopus)

抜粋

The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n e 2 / 3. The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n e 2 / 3. These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices.

元の言語English
記事番号013718
ジャーナルJournal of Applied Physics
112
発行部数1
DOI
出版物ステータスPublished - 2012 7 1
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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