Extracting mechanical Q factor of the pure AlN, ScAlN, and ZnO films without etching substrate

Naoya Iwata, Sarina Kinoshita, Takahiko Yanagitani

研究成果

抄録

The demand for the sharp RF filters is increasing to prevent interference in crowded frequency bands of the mobile communication. When other electrical loss and lateral acoustic wave leakage are adequately suppressed, the sharpness of BAW filters is determined by mechanical Q factors (Qm) of piezoelectric thin films. However, the Qm of various piezoelectric are not well known probably because a self-standing film structure (FBAR structure) are necessary to extract Qpiezo (Qm of the piezoelectric films). In this study, we grew pure AlN, ScAlN (40%), and ZnO thin films and ScAlN thin films with different Sc concentrations. In addition, we extracted the Qm of pure AlN, ScAlN, ZnO thin films, and ScAlN thin films with different Sc concentrations by using the method which can estimate Qm without removing substrates [1]. As a result, Qm of pure AlN thin film is higher than that of ScAlN and ZnO thin films and Qm of ScAlN and ZnO thin films are not different much. In addition, it was confirmed that the Qpiezo decreased with increasing Sc concentration.

本文言語English
ホスト出版物のタイトルIUS 2020 - International Ultrasonics Symposium, Proceedings
出版社IEEE Computer Society
ISBN(電子版)9781728154480
DOI
出版ステータスPublished - 2020 9 7
イベント2020 IEEE International Ultrasonics Symposium, IUS 2020 - Las Vegas, United States
継続期間: 2020 9 72020 9 11

出版物シリーズ

名前IEEE International Ultrasonics Symposium, IUS
2020-September
ISSN(印刷版)1948-5719
ISSN(電子版)1948-5727

Conference

Conference2020 IEEE International Ultrasonics Symposium, IUS 2020
国/地域United States
CityLas Vegas
Period20/9/720/9/11

ASJC Scopus subject areas

  • 音響学および超音波学

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