Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

Masaki Imakawa, Kosuke Sawabe, Yohei Yomogida, Yoshihiro Iwasa, Taishi Takenobu*

*この研究の対応する著者

    研究成果: Article査読

    17 被引用数 (Scopus)

    抄録

    A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.

    本文言語English
    論文番号233301
    ジャーナルApplied Physics Letters
    99
    23
    DOI
    出版ステータスPublished - 2011 12月 5

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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