Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu*, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi

*この研究の対応する著者

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

本文言語English
ページ257-260
ページ数4
出版ステータスPublished - 2000 1 1
外部発表はい
イベントInternational Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA
継続期間: 2000 9 62000 9 8

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
CitySeattle, WA, USA
Period00/9/600/9/8

ASJC Scopus subject areas

  • 工学(全般)

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