Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu; H. Takashino; M. Kidera; A. Teramoto; H. Umeda; K. Ishikawa; N. Kotani; M. Inuishi

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu^*, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi

^*この研究の対応する著者

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φ_b = 3.3 eV and m*_cm₀ = 0.41, is obtained after the extraction of various samples.

本文言語	English
ページ	257-260
ページ数	4
出版ステータス	Published - 2000 1月 1
外部発表	はい
イベント	International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA 継続期間: 2000 9月 6 → 2000 9月 8

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
City	Seattle, WA, USA
Period	00/9/6 → 00/9/8

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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title = "Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors",

abstract = "The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.",

author = "K. Eikyu and H. Takashino and M. Kidera and A. Teramoto and H. Umeda and K. Ishikawa and N. Kotani and M. Inuishi",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "257--260",

note = "International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 06-09-2000 Through 08-09-2000",

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TY - CONF

T1 - Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

AU - Eikyu, K.

AU - Takashino, H.

AU - Kidera, M.

AU - Teramoto, A.

AU - Umeda, H.

AU - Ishikawa, K.

AU - Kotani, N.

AU - Inuishi, M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

AB - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033679914&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033679914

SP - 257

EP - 260

T2 - International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 6 September 2000 through 8 September 2000

ER -

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

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Conference

ASJC Scopus subject areas

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