抄録
The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 257-260 |
| ページ数 | 4 |
| ジャーナル | Unknown Journal |
| 出版物ステータス | Published - 2000 |
| 外部発表 | Yes |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
これを引用
Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. / Eikyu, K.; Takashino, H.; Kidera, M.; Teramoto, A.; Umeda, H.; Ishikawa, K.; Kotani, N.; Inuishi, Masahide.
：: Unknown Journal, 2000, p. 257-260.研究成果: Article
}
TY - JOUR
T1 - Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors
AU - Eikyu, K.
AU - Takashino, H.
AU - Kidera, M.
AU - Teramoto, A.
AU - Umeda, H.
AU - Ishikawa, K.
AU - Kotani, N.
AU - Inuishi, Masahide
PY - 2000
Y1 - 2000
N2 - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.
AB - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.
UR - http://www.scopus.com/inward/record.url?scp=0033679914&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033679914&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033679914
SP - 257
EP - 260
JO - Nuclear Physics A
JF - Nuclear Physics A
SN - 0375-9474
ER -