The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.
|出版ステータス||Published - 2000 1月 1|
|イベント||International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA|
継続期間: 2000 9月 6 → 2000 9月 8
|Conference||International Conference on Simulation of Semiconductor Processes and Devices|
|City||Seattle, WA, USA|
|Period||00/9/6 → 00/9/8|
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