Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami*, Yuichi Matsushima, Y. Takahashi

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

本文言語English
ページ(範囲)192-193
ページ数2
ジャーナルElectronics Letters
31
3
DOI
出版ステータスPublished - 1995 2 2
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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