抄録
Improvement of diffraction efficiency of a vertically and contra-directionally coupled semiconductor waveguide type optical add and drop multiplexer was investigated theoretically and experimentally. Numerical calculations clarified that it was necessary to introduce a deep grating in order to attain low crosstalk characteristics required for practical application. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. Such a deep grating was realized by an optimization of surface treatment prior to MOVPE regrowth and growth condition. An extremely low crosstalk of -36 dB was successfully achieved.
本文言語 | English |
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ホスト出版物のタイトル | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
ページ | 458-461 |
ページ数 | 4 |
出版ステータス | Published - 2000 |
外部発表 | はい |
イベント | 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA 継続期間: 2000 5月 14 → 2000 5月 18 |
Other
Other | 2000 International Conference on Indium Phosphide and Related Materials |
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City | Williamsburg, VA, USA |
Period | 00/5/14 → 00/5/18 |
ASJC Scopus subject areas
- 物理学および天文学(全般)
- 材料科学(全般)