Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating

M. Horita, T. Yazaki, S. Tanaka, Yuichi Matsushima

研究成果: Chapter

2 被引用数 (Scopus)

抄録

Improvement of diffraction efficiency of a vertically and contra-directionally coupled semiconductor waveguide type optical add and drop multiplexer was investigated theoretically and experimentally. Numerical calculations clarified that it was necessary to introduce a deep grating in order to attain low crosstalk characteristics required for practical application. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. Such a deep grating was realized by an optimization of surface treatment prior to MOVPE regrowth and growth condition. An extremely low crosstalk of -36 dB was successfully achieved.

本文言語English
ホスト出版物のタイトルConference Proceedings - International Conference on Indium Phosphide and Related Materials
ページ458-461
ページ数4
出版ステータスPublished - 2000
外部発表はい
イベント2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
継続期間: 2000 5 142000 5 18

Other

Other2000 International Conference on Indium Phosphide and Related Materials
CityWilliamsburg, VA, USA
Period00/5/1400/5/18

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 材料科学(全般)

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