Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

Toshiki Makimoto*, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.

本文言語English
ページ(範囲)1527-1530
ページ数4
ジャーナルJournal of Electronic Materials
25
9
DOI
出版ステータスPublished - 1996 9月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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