The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 4月|
ASJC Scopus subject areas