Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors

Toshiki Makimoto*, Kazuhide Kumakura, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.

本文言語English
ページ(範囲)1922-1924
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
4 B
DOI
出版ステータスPublished - 2004 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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