抄録
Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.
本文言語 | English |
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ページ(範囲) | 4581-4583 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 82 |
号 | 25 |
DOI | |
出版ステータス | Published - 2003 6月 23 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)