Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi, T. Takenobu, S. Mon, A. Fujiwara, Y. Iwasa

研究成果: Article

231 引用 (Scopus)

抜粋

Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

元の言語English
ページ(範囲)4581-4583
ページ数3
ジャーナルApplied Physics Letters
82
発行部数25
DOI
出版物ステータスPublished - 2003 6 23
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント Fabrication and characterization of C<sub>60</sub> thin-film transistors with high field-effect mobility' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用