抜粋
Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 4581-4583 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 82 |
| 発行部数 | 25 |
| DOI | |
| 出版物ステータス | Published - 2003 6 23 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
フィンガープリント Fabrication and characterization of C<sub>60</sub> thin-film transistors with high field-effect mobility' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Kobayashi, S., Takenobu, T., Mon, S., Fujiwara, A., & Iwasa, Y. (2003). Fabrication and characterization of C60 thin-film transistors with high field-effect mobility. Applied Physics Letters, 82(25), 4581-4583. https://doi.org/10.1063/1.1577383