Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi; T. Takenobu; S. Mon; A. Fujiwara; Y. Iwasa

doi:10.1063/1.1577383

Fabrication and characterization of C₆₀ thin-film transistors with high field-effect mobility

S. Kobayashi^*, T. Takenobu, S. Mon, A. Fujiwara, Y. Iwasa

^*この研究の対応する著者

研究成果: Article › 査読

234 被引用数 (Scopus)

抄録

Fabrication and characterization of C₆₀ thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm²/V was achieved in C₆₀ TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

本文言語	English
ページ（範囲）	4581-4583
ページ数	3
ジャーナル	Applied Physics Letters
巻	82
号	25
DOI	https://doi.org/10.1063/1.1577383
出版ステータス	Published - 2003 6月 23
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1577383

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引用スタイル

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