Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer

Masahiro Itoh, Hiroshi Kawarada

    研究成果: Chapter

    32 引用 (Scopus)

    抄録

    Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of undoped homoepitaxial diamond film on the surface. The layers have been employed as the channel of MESFETs. Since the surface-conductive layer is ultrathin, the depletion region has already closed the surface-conductive channel at the gate voltage of O V, i.e., these MESFETs exhibit the enhancement mode (normally off-mode). The threshold voltages are -1.6 V and -0.7 V in the case of Al and Pb gate respectively. These MESFETs also exhibit channel pinch-off and complete saturation of drain current, and high transconductance of 2.5 mS/mm at room temperature. This value is the highest of all diamond FETs at present, enhancement/resistor (E/R) inverters with the enhancement mode transistor and resistor, and direct coupled enhancement/enhancement (E/E) inverters with the two enhancement mode transistors have been also fabricated. This E/R inverter exhibits high voltage gain. For a E/E inverter, the voltage gain has also been measured as a function of frequency. The high 3-dB frequency (fH) is above 2 MHz. The voltage gain at frequency = (Hz) is equal to 1√2 the voltage gain at frequency = O (Hz).

    元の言語English
    ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    出版場所Minato-ku, Japan
    出版者JJAP
    ページ4677-4681
    ページ数5
    34
    エディション9 A
    出版物ステータスPublished - 1995 9

    Fingerprint

    MESFET devices
    Diamonds
    Fabrication
    Resistors
    Electric potential
    Transistors
    Drain current
    Diamond films
    Transconductance
    Field effect transistors
    Threshold voltage

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Itoh, M., & Kawarada, H. (1995). Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A 版, 巻 34, pp. 4677-4681). Minato-ku, Japan: JJAP.

    Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. / Itoh, Masahiro; Kawarada, Hiroshi.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 9 A. 編 Minato-ku, Japan : JJAP, 1995. p. 4677-4681.

    研究成果: Chapter

    Itoh, M & Kawarada, H 1995, Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A Edn, 巻. 34, JJAP, Minato-ku, Japan, pp. 4677-4681.
    Itoh M, Kawarada H. Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A 版 巻 34. Minato-ku, Japan: JJAP. 1995. p. 4677-4681
    Itoh, Masahiro ; Kawarada, Hiroshi. / Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 9 A. 版 Minato-ku, Japan : JJAP, 1995. pp. 4677-4681
    @inbook{411c6b4953e047b89c0616948250ea3a,
    title = "Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer",
    abstract = "Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of undoped homoepitaxial diamond film on the surface. The layers have been employed as the channel of MESFETs. Since the surface-conductive layer is ultrathin, the depletion region has already closed the surface-conductive channel at the gate voltage of O V, i.e., these MESFETs exhibit the enhancement mode (normally off-mode). The threshold voltages are -1.6 V and -0.7 V in the case of Al and Pb gate respectively. These MESFETs also exhibit channel pinch-off and complete saturation of drain current, and high transconductance of 2.5 mS/mm at room temperature. This value is the highest of all diamond FETs at present, enhancement/resistor (E/R) inverters with the enhancement mode transistor and resistor, and direct coupled enhancement/enhancement (E/E) inverters with the two enhancement mode transistors have been also fabricated. This E/R inverter exhibits high voltage gain. For a E/E inverter, the voltage gain has also been measured as a function of frequency. The high 3-dB frequency (fH) is above 2 MHz. The voltage gain at frequency = (Hz) is equal to 1√2 the voltage gain at frequency = O (Hz).",
    author = "Masahiro Itoh and Hiroshi Kawarada",
    year = "1995",
    month = "9",
    language = "English",
    volume = "34",
    pages = "4677--4681",
    booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers",
    publisher = "JJAP",
    edition = "9 A",

    }

    TY - CHAP

    T1 - Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer

    AU - Itoh, Masahiro

    AU - Kawarada, Hiroshi

    PY - 1995/9

    Y1 - 1995/9

    N2 - Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of undoped homoepitaxial diamond film on the surface. The layers have been employed as the channel of MESFETs. Since the surface-conductive layer is ultrathin, the depletion region has already closed the surface-conductive channel at the gate voltage of O V, i.e., these MESFETs exhibit the enhancement mode (normally off-mode). The threshold voltages are -1.6 V and -0.7 V in the case of Al and Pb gate respectively. These MESFETs also exhibit channel pinch-off and complete saturation of drain current, and high transconductance of 2.5 mS/mm at room temperature. This value is the highest of all diamond FETs at present, enhancement/resistor (E/R) inverters with the enhancement mode transistor and resistor, and direct coupled enhancement/enhancement (E/E) inverters with the two enhancement mode transistors have been also fabricated. This E/R inverter exhibits high voltage gain. For a E/E inverter, the voltage gain has also been measured as a function of frequency. The high 3-dB frequency (fH) is above 2 MHz. The voltage gain at frequency = (Hz) is equal to 1√2 the voltage gain at frequency = O (Hz).

    AB - Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of undoped homoepitaxial diamond film on the surface. The layers have been employed as the channel of MESFETs. Since the surface-conductive layer is ultrathin, the depletion region has already closed the surface-conductive channel at the gate voltage of O V, i.e., these MESFETs exhibit the enhancement mode (normally off-mode). The threshold voltages are -1.6 V and -0.7 V in the case of Al and Pb gate respectively. These MESFETs also exhibit channel pinch-off and complete saturation of drain current, and high transconductance of 2.5 mS/mm at room temperature. This value is the highest of all diamond FETs at present, enhancement/resistor (E/R) inverters with the enhancement mode transistor and resistor, and direct coupled enhancement/enhancement (E/E) inverters with the two enhancement mode transistors have been also fabricated. This E/R inverter exhibits high voltage gain. For a E/E inverter, the voltage gain has also been measured as a function of frequency. The high 3-dB frequency (fH) is above 2 MHz. The voltage gain at frequency = (Hz) is equal to 1√2 the voltage gain at frequency = O (Hz).

    UR - http://www.scopus.com/inward/record.url?scp=0029371416&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0029371416&partnerID=8YFLogxK

    M3 - Chapter

    AN - SCOPUS:0029371416

    VL - 34

    SP - 4677

    EP - 4681

    BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

    PB - JJAP

    CY - Minato-ku, Japan

    ER -