Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer

Physics & Astronomy

• inverters 60%
• diamonds 48%
• field effect transistors 48%
• augmentation 37%
• fabrication 37%
• characterization 34%
• metals 31%
• electric potential 26%
• resistors 25%
• transistors 19%
• transconductance 13%
• diamond films 13%
• threshold voltage 11%
• depletion 10%
• high voltages 10%
• saturation 8%
• room temperature 6%

Engineering & Materials Science

• MESFET devices 100%
• Diamonds 61%
• Fabrication 45%
• Electric potential 31%
• Resistors 23%
• Transistors 20%
• Diamond films 18%
• Drain current 15%
• Transconductance 14%
• Threshold voltage 13%
• Field effect transistors 13%
• Temperature 4%