Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu*, Takashi Hamada, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

*この研究の対応する著者

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO 2 dielectrics.

本文言語English
ページ(範囲)3196-3199
ページ数4
ジャーナルJapanese journal of applied physics
47
4 PART 2
DOI
出版ステータスPublished - 2008 4月 25
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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