Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT:PCBM organic materials

Hideo Kaiju, Kenji Kondo, Nubla Basheer, Nobuyoshi Kawaguchi, Susanne White, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

研究成果: Conference contribution


We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

ホスト出版物のタイトルMaterials and Devices for End-of-Roadmap and Beyond CMOS Scaling
出版ステータスPublished - 2010 12 1
イベント2010 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2010 4 52010 4 9


名前Materials Research Society Symposium Proceedings


Conference2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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