TY - GEN
T1 - Fabrication and Temperature Characteristics of 1550nm InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers with Side Grating
AU - Kaneko, R.
AU - Katsuhara, R.
AU - Yabuki, R.
AU - Matsumoto, A.
AU - Akahane, K.
AU - Matsushima, Y.
AU - Ishikawa, Hiroshi
AU - Utaka, K.
N1 - Funding Information:
This work was partially conducted under a research project supported by the National Institute of Information andCommunicationsTechnology(No.01301),Japan.
Funding Information:
This work was partially conducted under a research project supported by the National Institute of Information and Communications Technology (No.01301), Japan.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm2, and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.
AB - Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm2, and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.
KW - 1550nm-band Qauntum Dot
KW - DFB lasers
KW - High temperature operation
KW - Single-wavelength oscillation
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U2 - 10.1109/CSW55288.2022.9930377
DO - 10.1109/CSW55288.2022.9930377
M3 - Conference contribution
AN - SCOPUS:85142656477
T3 - 2022 Compound Semiconductor Week, CSW 2022
BT - 2022 Compound Semiconductor Week, CSW 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Compound Semiconductor Week, CSW 2022
Y2 - 1 June 2022 through 3 June 2022
ER -