Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor

Hitoshi Umezawa, Yoshikazu Ohba, Hiroaki Ishizaka, Takuya Arima, Hirotada Taniuchi, Minoru Tachiki, Hiroshi Kawarada

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Analysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope 5 by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 μm FET with thin gate insulator 15 nm in thickness.

本文言語English
ホスト出版物のタイトルWide-Bandgap Electronics
出版社Materials Research Society
ページ220-225
ページ数6
ISBN(印刷版)1558996168, 9781558996168
DOI
出版ステータスPublished - 2001 1月 1
外部発表はい
イベント2001 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2001 4月 162001 4月 20

出版物シリーズ

名前Materials Research Society Symposium Proceedings
680
ISSN(印刷版)0272-9172

Conference

Conference2001 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period01/4/1601/4/20

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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