Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

Tomohiro Kita, D. Chiba, Y. Ohno, H. Ohno

研究成果: Article

抄録

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

元の言語English
ページ(範囲)1930-1932
ページ数3
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
40
発行部数6
DOI
出版物ステータスPublished - 2008 4 1
外部発表Yes

Fingerprint

Semiconductor quantum dots
quantum dots
insulators
Resonant tunneling diodes
Fabrication
resonant tunneling diodes
fabrication
Atomic layer deposition
Electrons
atomic layer epitaxy
Nanostructures
leakage
electrons
Semiconductor materials
Electrodes
electrodes
air
Processing
Air
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

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abstract = "For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.",
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T1 - Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

AU - Kita, Tomohiro

AU - Chiba, D.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

AB - For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

KW - ALD

KW - InGaAs

KW - MOS

KW - Quantum dot

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VL - 40

SP - 1930

EP - 1932

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 6

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