Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno

研究成果: Article

抜粋

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

元の言語English
ページ(範囲)1930-1932
ページ数3
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
40
発行部数6
DOI
出版物ステータスPublished - 2008 4 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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