Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding

Kazuya Nomura; Jun Mizuno; Akiko Okada; Shuichi Shoji; Toshinori Ogashiwa

doi:10.1109/ICEP-IAAC.2015.7111054

Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding

Kazuya Nomura, Jun Mizuno, Akiko Okada, Shuichi Shoji, Toshinori Ogashiwa

ナノ・ライフ創新研究機構

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We propose a novel fabrication methodology for a hermetic sealing device using O<inf>2</inf> plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O<inf>2</inf> plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

本文言語	English
ホスト出版物のタイトル	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	444-447
ページ数	4
ISBN（印刷版）	9784904090138
DOI	https://doi.org/10.1109/ICEP-IAAC.2015.7111054
出版ステータス	Published - 2015 5月 20
イベント	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan 継続期間: 2015 4月 14 → 2015 4月 17

Other

Other	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
国/地域	Japan
City	Kyoto
Period	15/4/14 → 15/4/17

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/ICEP-IAAC.2015.7111054

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引用スタイル

Nomura, K., Mizuno, J., Okada, A., Shoji, S., & Ogashiwa, T. (2015). Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 444-447). [7111054] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111054

Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. / Nomura, Kazuya; Mizuno, Jun; Okada, Akiko その他.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 444-447 7111054.

研究成果: Conference contribution

Nomura, K, Mizuno, J, Okada, A, Shoji, S & Ogashiwa, T 2015, Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111054, Institute of Electrical and Electronics Engineers Inc., pp. 444-447, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111054

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title = "Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding",

abstract = "We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.",

keywords = "glass-to-glass structure, hermetic sealing, HF wet etching, I-Si/glass bonding, low temperature bonding",

author = "Kazuya Nomura and Jun Mizuno and Akiko Okada and Shuichi Shoji and Toshinori Ogashiwa",

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AU - Nomura, Kazuya

AU - Mizuno, Jun

AU - Okada, Akiko

AU - Shoji, Shuichi

AU - Ogashiwa, Toshinori

PY - 2015/5/20

Y1 - 2015/5/20

N2 - We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

AB - We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

KW - glass-to-glass structure

KW - hermetic sealing

KW - HF wet etching

KW - I-Si/glass bonding

KW - low temperature bonding

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BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 14 April 2015 through 17 April 2015

ER -

Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding

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