Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding

Kazuya Nomura, Jun Mizuno, Akiko Okada, Shuichi Shoji, Toshinori Ogashiwa

研究成果

1 被引用数 (Scopus)

抄録

We propose a novel fabrication methodology for a hermetic sealing device using O<inf>2</inf> plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O<inf>2</inf> plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

本文言語English
ホスト出版物のタイトルICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ444-447
ページ数4
ISBN(印刷版)9784904090138
DOI
出版ステータスPublished - 2015 5 20
イベント2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
継続期間: 2015 4 142015 4 17

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
国/地域Japan
CityKyoto
Period15/4/1415/4/17

ASJC Scopus subject areas

  • 電子工学および電気工学

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