抄録
We propose a novel fabrication methodology for a hermetic sealing device using O<inf>2</inf> plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O<inf>2</inf> plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.
本文言語 | English |
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ホスト出版物のタイトル | ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ページ | 444-447 |
ページ数 | 4 |
ISBN(印刷版) | 9784904090138 |
DOI | |
出版ステータス | Published - 2015 5月 20 |
イベント | 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan 継続期間: 2015 4月 14 → 2015 4月 17 |
Other
Other | 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 |
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国/地域 | Japan |
City | Kyoto |
Period | 15/4/14 → 15/4/17 |
ASJC Scopus subject areas
- 電子工学および電気工学