Fabrication of a silicon oxide film by ozone and 1,1,1,3,3,3- hexamethyldisilazane (HMDS): Infrared Absorption analysis on a photochemical reaction in the gas phase

Ken Nakamura, Hidehiko Nonaka, Naoto Kameda, Tetsuya Nishiguchi, Shingo Ichimura

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Fourier-Transformed Infrared absorption spectroscopy (FT-IR) was applied to analysis of initial photochemical reaction of ozone (O3) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) at room temperature in the gas phase under the irradiation of an ultraviolet (UV) light, as the side reaction during the fabrication of a silicon oxide (SiO2) film by photo-assisted chemical vapor deposition (CVD). FT-IR spectrum indicated the photodissociation of O3 by the UV light, shown by the decreases in the intensity of peaks assigned to an O3 molecule in the spectrum. Under the confirmation of this photodissociation of an O3 molecule, while the UV light is known to induce no photochemical reaction of HMDS, FT-IR spectrum indicated the photochemical reaction of HMDS by its scission of Si-N-Si bond and formation of C = O bond and SiO2 in a mixture of O3 and HMDS gases, thus showing that direct reaction of photodissociated species from O3, possibly atomic oxygen, with HMDS.

本文言語English
ページ(範囲)224-227
ページ数4
ジャーナルJournal of the Vacuum Society of Japan
51
3
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 器械工学
  • 表面および界面
  • 分光学

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