Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

研究成果: Conference contribution

5 引用 (Scopus)

抜粋

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

元の言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
6999
DOI
出版物ステータスPublished - 2008
外部発表Yes
イベントOrganic Optoelectronics and Photonics III - Strasbourg
継続期間: 2008 4 72008 4 10

Other

OtherOrganic Optoelectronics and Photonics III
Strasbourg
期間08/4/708/4/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • これを引用

    Bisri, S. Z., Takenobu, T., Yomogida, Y., Yamao, T., Yahiro, M., Hotta, S., Adachi, C., & Iwasa, Y. (2008). Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. : Proceedings of SPIE - The International Society for Optical Engineering (巻 6999). [69990Z] https://doi.org/10.1117/12.781126