FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

Shuichi Okano*, Hiroshi Yamakawa, Masakuni Suzuki, Akio Hiraki

*この研究の対応する著者

研究成果

3 被引用数 (Scopus)

抄録

Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

本文言語English
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
ページ1102-1106
ページ数5
26
7
出版ステータスPublished - 1987 7
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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