Fabrication of diamond single-hole transistors using AFM anodization process

Tokishige Banno*, Minoru Tachiki, Hokuto Seo, Hitoshi Umezawa, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

30 被引用数 (Scopus)

抄録

By the field-assisted local anodization technique using an atomic force microscope (AFM), a single-hole transistor has been fabricated on an undoped hydrogen-terminated diamond surface where p-type conduction occurs on the subsurface region. A dual side-gated FET structure has been applied to modulate the island potential in the single-hole transistor. The island size is 230 nm×230 nm, and the width of the barrier is approximately 100 nm. Measurements of the current-gate voltage characteristic at a temperature of 4.6 K show significant non-linearities including a current oscillation suggestive of single-hole transistor behavior. The oscillation that is significantly affected by the application of the side gate potential is explained by the shrinkage of the conductive island with the expansion of the depletion region.

本文言語English
ページ(範囲)387-391
ページ数5
ジャーナルDiamond and Related Materials
11
3-6
DOI
出版ステータスPublished - 2002 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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