Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

Tetsuya Osaka*, Nao Takano, Tetsuya Kurokawa, Kazuyoshi Ueno

*この研究の対応する著者

研究成果: Article査読

45 被引用数 (Scopus)

抄録

A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizing a self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO2 surface in a high pH bath.

本文言語English
ページ(範囲)C7-C10
ジャーナルElectrochemical and Solid-State Letters
5
1
DOI
出版ステータスPublished - 2002 1 1

ASJC Scopus subject areas

  • 化学工学(全般)
  • 材料科学(全般)
  • 物理化学および理論化学
  • 電気化学
  • 電子工学および電気工学

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